Thermal treatment of InGaAs/GaAs self-assembled quantum dots with PECVD-grown SiO/sub 2/ capping layer

Authors :: Seung-Sang Hwang
Woon-Jo Cho
Il-Ki Han
W. J. Choi
Jong Inn Lee
Young Min Park
Youn-Ho Park
J.W. Choe
Jae Cheol Shin
Jin Dong Song
Source :: The 30th International Conference on Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts..
Publication Year :: 2003
Publisher :: IEEE, 2003.
Abstract: Summary form only given, as follows. Summary form only given. Intermixing effects of MBE (Molecular Beam Epitaxy) grown InGaAs SAQDs (Self-Assembled Quantum Dots) covered with SiO/sub 2/ dielectric capping layers, which was grown by PECVD, were investigated. After the thermal annealing, photoluminescence (PL) measurement has been carried for the optical characterization at the room temperature quantum well with PECVD-grown SiO/sub 2/ capping layer.

Subjects :: Photoluminescence
Materials science
business.industry
Annealing (metallurgy)
Thermal treatment
Gallium arsenide
chemistry.chemical_compound
chemistry
Quantum dot
Optoelectronics
business
Quantum well
Indium gallium arsenide
Molecular beam epitaxy

Database :: OpenAIRE
Journal :: The 30th International Conference on Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts.
Accession number :: edsair.doi...........fb30fccb4b898567e3cc79d1de390ad3
Full Text :: https://doi.org/10.1109/plasma.2003.1229995

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