193-nm imaging using a small-field high-resolution imaging resist exposure tool

A 193nm excimer laser microstepper has been developed for deep UV photolithography research at this wavelength. The system incorporates a x10, 0.5NA, 4mm field diameter, high-resolution imaging lens of either all-refractive or catadioptric design. An all-fused silica refractive lens has been used in the results reported here to carry out exposures in polymethylmethacrylate and polyvinylphenol photoresists. Well-resolved images of 0.2micrometers dense lines and spaces and 0.35micrometers diameter contact holes have been produced in PMMA and polyvinylphenol resists.