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Integration of Fe3O4 nanospheres and micropyramidal textured silicon wafer with improved photoelectrochemical performance
- Source :
- Journal of Materials Science: Materials in Electronics. 32:5176-5185
- Publication Year :
- 2021
- Publisher :
- Springer Science and Business Media LLC, 2021.
-
Abstract
- Silicon (Si)-based composites have attracted extensive attention for photoelectrochemical (PEC) application. Herein, micropyramidal textured Si wafer was constructed by wet chemical etching method. Hydrothermally synthesized Fe3O4 nanospheres were further deposited on the micropyramids by a simple dip-coating approach. The integrated Fe3O4 nanospheres and Si micropyramids (denoted as Fe3O4@SiMPs) revealed 20 times of higher PEC efficiency than planar Si wafer, without obvious photocurrent decay and crystalline structure change during chronoamperometry test. The greatly enhanced PEC performance of Fe3O4@SiMPs is largely attributed to the seamless integration of Si micropyramids and Fe3O4 nanospheres. The micropyramidal textured structure can enhance light absorption by reducing the surface reflectance and enhancing the light trapping effect. The micropyramids and Fe3O4 nanospheres on the surface of planar Si wafer offer more specific surface area for the contact of electrode with electrolyte. The Fe3O4 nanospheres not only protect the micropyramids from corrosion, but also accelerate the PEC kinetics by promoting charge transfer between the electrode and the electrolyte. This study can inspire the optimal design of Si wafer-based nanocomposites as efficient PEC catalysts for overall water splitting.
- Subjects :
- 010302 applied physics
Photocurrent
Materials science
Nanocomposite
Silicon
business.industry
chemistry.chemical_element
Chronoamperometry
Condensed Matter Physics
01 natural sciences
Isotropic etching
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
chemistry
0103 physical sciences
Electrode
Optoelectronics
Water splitting
Wafer
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 1573482X and 09574522
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Science: Materials in Electronics
- Accession number :
- edsair.doi...........fac394eecaa313ab3071db87147374aa
- Full Text :
- https://doi.org/10.1007/s10854-021-05249-2