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A novel p-channel dual action device for HVIC

Authors :
S. Asai
H. Akiyama
M. Okada
K. Watabe
Tomohide Terashima
S. Nobuto
M. Yamawaki
Source :
Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting.
Publication Year :
2002
Publisher :
IEEE, 2002.

Abstract

A novel lateral power device termed p-channel Dual Action Device (p-ch DAD) is proposed and demonstrated in action experimentally. The new device has successfully increased on-state current without lowering the device breakdown voltage. 600 V level-shifting action of the p-ch DAD has been confirmed by a circuit experiment.

Details

Database :
OpenAIRE
Journal :
Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting
Accession number :
edsair.doi...........fa900c0df01cf0a6857ec8cfc5f8bbc9
Full Text :
https://doi.org/10.1109/bipol.1997.647422