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High Charge Carrier Mobility in Two Dimensional Indium (III) Isophthalic Acid Based Frameworks
- Source :
- Proceedings of the National Academy of Sciences, India Section A: Physical Sciences. 84:331-336
- Publication Year :
- 2014
- Publisher :
- Springer Science and Business Media LLC, 2014.
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Abstract
- The effect of dimensionality (1D to 2D) on charge carrier mobility have been studied thoroughly on three In(III)-isophthalate based MOFs [In-IA-1D, In-IA-2D-1 and -2]. In-IA-1D possess 1D nanotubular architecture with [(CH3)2NH2]+. In-IA-2D-1 have 2D layers containing only [(CH3)2NH2]+ cations. Whereas, In-IA-2D-2 have [(CH3)2NH2]+ cations as well as solvent DMF molecule inside the crystal structure. Due to presence of the π–π stacking arrangement among the phenyl rings of IA moieties facilitates the high charge carrier mobility (4.6 × 10−3 cm2 V−1 s−1 at VG = −40 V) in In-IA-2D-2. However, In-IA-1D and In-IA-2D-1 does not show any charge carrier mobility due to absence of π–π stacking arrangement.
Details
- ISSN :
- 22501762 and 03698203
- Volume :
- 84
- Database :
- OpenAIRE
- Journal :
- Proceedings of the National Academy of Sciences, India Section A: Physical Sciences
- Accession number :
- edsair.doi...........fa507ece19aabfb9a93a5e729c30e45e