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High Charge Carrier Mobility in Two Dimensional Indium (III) Isophthalic Acid Based Frameworks

Authors :
Tamas Panda
Rahul Banerjee
Source :
Proceedings of the National Academy of Sciences, India Section A: Physical Sciences. 84:331-336
Publication Year :
2014
Publisher :
Springer Science and Business Media LLC, 2014.

Abstract

The effect of dimensionality (1D to 2D) on charge carrier mobility have been studied thoroughly on three In(III)-isophthalate based MOFs [In-IA-1D, In-IA-2D-1 and -2]. In-IA-1D possess 1D nanotubular architecture with [(CH3)2NH2]+. In-IA-2D-1 have 2D layers containing only [(CH3)2NH2]+ cations. Whereas, In-IA-2D-2 have [(CH3)2NH2]+ cations as well as solvent DMF molecule inside the crystal structure. Due to presence of the π–π stacking arrangement among the phenyl rings of IA moieties facilitates the high charge carrier mobility (4.6 × 10−3 cm2 V−1 s−1 at VG = −40 V) in In-IA-2D-2. However, In-IA-1D and In-IA-2D-1 does not show any charge carrier mobility due to absence of π–π stacking arrangement.

Details

ISSN :
22501762 and 03698203
Volume :
84
Database :
OpenAIRE
Journal :
Proceedings of the National Academy of Sciences, India Section A: Physical Sciences
Accession number :
edsair.doi...........fa507ece19aabfb9a93a5e729c30e45e