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Influence of Surface Treatment Prior to ALD High-<tex>$kappa$</tex>Dielectrics on the Performance of SiGe Surface-Channel pMOSFETs
- Source :
- IEEE Electron Device Letters. 25:289-291
- Publication Year :
- 2004
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2004.
-
Abstract
- Compressively strained Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFETs with atomic layer deposition (ALD) Al/sub 2/O/sub 3//HfO/sub 2//Al/sub 2/O/sub 3/ nanolaminate and low-pressure chemical vapor deposition p/sup +/ poly-SiGe gate electrode were fabricated. Surface treatment with either hydrogen fluoride (HF) clean, or HF clean followed by water rinse was performed prior to the ALD processing. The devices with water rinse show a good control of interfacial layer and device reproducibility, while the devices without water rinse lack a clearly observable interfacial layer and show scattered electrical characteristics and distorted mobility curve. A /spl sim/20% increase in hole mobility compared to the Si universal mobility and a /spl sim/0.6-nm-thick continuous interfacial layer are obtained for the pMOSFETs with water rinse.
- Subjects :
- Reproducibility
Electron mobility
Materials science
Analytical chemistry
Chemical vapor deposition
Dielectric
Hydrogen fluoride
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Atomic layer deposition
chemistry
Electrode
Electronic engineering
Electrical and Electronic Engineering
Layer (electronics)
Subjects
Details
- ISSN :
- 07413106
- Volume :
- 25
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........f9ca6ac26876bc1035ba548b71bf3f00