Back to Search
Start Over
On the origin of spin loss in GaMnN/InGaN light-emitting diodes
- Source :
- Applied Physics Letters. 84:2599-2601
- Publication Year :
- 2004
- Publisher :
- AIP Publishing, 2004.
-
Abstract
- Spin polarization of GaMnN/InGaN light-emitting diodes grown by molecular beam epitaxy is analyzed. In spite of the ferromagnetic behavior of the GaMnN spin injector, the diodes are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection.
- Subjects :
- Photoluminescence
Materials science
Physics and Astronomy (miscellaneous)
Condensed matter physics
Spin polarization
business.industry
Wide-bandgap semiconductor
Electroluminescence
Ferromagnetism
Optoelectronics
Condensed Matter::Strongly Correlated Electrons
business
Molecular beam epitaxy
Diode
Spin-½
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 84
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........f9c8507d28b2158a6bbc48c9080a2e5f