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A novel low voltage and high speed CMOS charge pump circuit

Authors :
Gao Tie-cheng
Fu Xiansong
Niu Pingjuan
Yang Guanghua
Fan Qiang
Source :
2010 2nd International Conference on Signal Processing Systems.
Publication Year :
2010
Publisher :
IEEE, 2010.

Abstract

A novel low voltage, high speed CMOS charge pump circuit for PLL is designed in the paper. The new structure refrains from the common spurious jump phenomenon, and is designed in N well mixed-signal Chartered 0.35μm CMOS process, simulated using Hspice. The results show the new circuit can operate under a 1V power supply, does not suffer from any waveform jitter. The output voltage has a relatively wide range, from 120mV up to 980mV. The operating frequency is 500MHz, and power consumption is low to 150μW.

Details

Database :
OpenAIRE
Journal :
2010 2nd International Conference on Signal Processing Systems
Accession number :
edsair.doi...........f93b7901535af080494c807f7daf3ab5
Full Text :
https://doi.org/10.1109/icsps.2010.5555828