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Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates*
- Source :
- Chinese Physics B. 29:047102
- Publication Year :
- 2020
- Publisher :
- IOP Publishing, 2020.
-
Abstract
- An analytical drain current model on the basis of the surface potential is proposed for indium–gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) with an independent dual-gate (IDG) structure. For a unified expression of carriers’ distribution for the sub-threshold region and the conduction region, the concept of equivalent flat-band voltage and the Lambert W function are introduced to solve the Poisson equation, and to derive the potential distribution of the active layer. In addition, the regional integration approach is used to develop a compact analytical current–voltage model. Although only two fitting parameters are required, a good agreement is obtained between the calculated results by the proposed model and the simulation results by TCAD. The proposed current–voltage model is then implemented by using Verilog-A for SPICE simulations of a dual-gate InGaZnO TFT integrated inverter circuit.
Details
- ISSN :
- 16741056
- Volume :
- 29
- Database :
- OpenAIRE
- Journal :
- Chinese Physics B
- Accession number :
- edsair.doi...........f93293690e63b541b64d9185caa5283c