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Charge-based testing BIST for embedded memories
- Source :
- IET Computers & Digital Techniques. 1:481
- Publication Year :
- 2007
- Publisher :
- Institution of Engineering and Technology (IET), 2007.
-
Abstract
- A BIST architecture is presented to perform charge-based testing (BIST-CBT) on embedded memories where direct access to I/Os is limited. The proposed architecture includes a charge monitor, a functional test algorithm generator (that applies a standard March B algorithm) and output processing circuitry. The method is based on a charge correlation technique validated experimentally on previous works for submicron SRAMs. The testing methodology implementation has two phases: a short pre-characterisation phase performed during manufacturing test to ensure process-variation immunity, and the actual BIST-CBT. Data from the first phase are processed and loaded in the BIST circuitry registers. The proposed embedded BIST circuitry provides a digital output pass/fail flag that signals the result of the functional and BIST charge analysis (both based on the same March algorithms). To demonstrate the viability of the proposed architecture, a prototype is designed that has been implemented in two parts: the charge monitor is the core of the BIST circuitry, and has been developed in 120 nm CMOS technology, whereas the digital processing circuitry has been implemented on a FPGA device.
- Subjects :
- Engineering
Generator (computer programming)
business.industry
Hardware_PERFORMANCEANDRELIABILITY
Integrated circuit
law.invention
Reliability (semiconductor)
CMOS
Built-in self-test
Hardware and Architecture
law
Embedded system
Memory architecture
Hardware_INTEGRATEDCIRCUITS
Static random-access memory
Electrical and Electronic Engineering
business
Field-programmable gate array
Hardware_REGISTER-TRANSFER-LEVELIMPLEMENTATION
Software
Subjects
Details
- ISSN :
- 17518601
- Volume :
- 1
- Database :
- OpenAIRE
- Journal :
- IET Computers & Digital Techniques
- Accession number :
- edsair.doi...........f92654506d045bcbff10ae6ee1e01ba2
- Full Text :
- https://doi.org/10.1049/iet-cdt:20060058