An analysis of electron beam evaporation of SrTiO3on Si substrates

Thin films have been prepared by electron beam evaporation of strontium titanate (SrTiO3) on bare (111) p-type silicon substrate held at room temperature. The as deposited films were annealed at 700 degrees C in flowing oxygen to compensate for any loss of O from the sample. The as deposited and the annealed samples were analysed by Auger electron spectroscopy (AES). The AES analysis shows that there is no trace of Si present in the bulk of the film and the Si/film interface is fairly sharp. The results are discussed in the light of the usefulness of the e-beam deposition of SrTiO3 for preparation of a buffer layer on an Si substrate for the deposition of high-Tc superconducting materials in thick- and thin-film form.