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Application of Self-Aligned Amorphous SI Thin-Film Transistors
- Source :
- MRS Proceedings. 557
- Publication Year :
- 1999
- Publisher :
- Springer Science and Business Media LLC, 1999.
-
Abstract
- We have successfully used self-aligned Amorphous Si Thin-Film Transistors, fabricated by a laser doping/annealing process, to construct dynamic shift register circuits, which can be used as gate-line drivers or in other peripheral circuits for flat-panel displays and imagers. Taking advantage of easily scaling down the TFT channel length in a self-aligned process, much higher circuit speeds can be achieved compared to that of circuits using conventional TFTs. We have successfully demonstrated a four-phase dynamic shift register, operating at a clock speed higher that 250 kHz (1 μs for each clock phase) built on 3 μm channel length TFTs. This new technology opens up possibilities for integrating peripheral circuits in flat-panel displays and imagers based on a-Si TFTs.
Details
- ISSN :
- 19464274 and 02729172
- Volume :
- 557
- Database :
- OpenAIRE
- Journal :
- MRS Proceedings
- Accession number :
- edsair.doi...........f90ac8e7e58d2a10d036d6883df76d1f