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Application of Self-Aligned Amorphous SI Thin-Film Transistors

Authors :
J. B. Boyce
Rene A. Lujan
Ping Mei
Christopher L. Chua
Y. Wang
Jackson Ho
JengPing Lu
Source :
MRS Proceedings. 557
Publication Year :
1999
Publisher :
Springer Science and Business Media LLC, 1999.

Abstract

We have successfully used self-aligned Amorphous Si Thin-Film Transistors, fabricated by a laser doping/annealing process, to construct dynamic shift register circuits, which can be used as gate-line drivers or in other peripheral circuits for flat-panel displays and imagers. Taking advantage of easily scaling down the TFT channel length in a self-aligned process, much higher circuit speeds can be achieved compared to that of circuits using conventional TFTs. We have successfully demonstrated a four-phase dynamic shift register, operating at a clock speed higher that 250 kHz (1 μs for each clock phase) built on 3 μm channel length TFTs. This new technology opens up possibilities for integrating peripheral circuits in flat-panel displays and imagers based on a-Si TFTs.

Details

ISSN :
19464274 and 02729172
Volume :
557
Database :
OpenAIRE
Journal :
MRS Proceedings
Accession number :
edsair.doi...........f90ac8e7e58d2a10d036d6883df76d1f