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Band offsets of La2O3 on (0001) GaN grown by reactive molecular-beam epitaxy

Authors :
Jon F. Ihlefeld
Michael T. Brumbach
Stanley Atcitty
Source :
Applied Physics Letters. 102:162903
Publication Year :
2013
Publisher :
AIP Publishing, 2013.

Abstract

La2O3 films were prepared on (0001)-oriented GaN substrates via reactive molecular-beam epitaxy. Film orientation and phase were assessed using reflection high-energy electron and X-ray diffraction. Films were observed to grow as predominantly hexagonal La2O3 for thicknesses less than 10 nm while film thickness greater than 10 nm favored mixed cubic and hexagonal symmetries. Band offsets were characterized by X-ray photoelectron spectroscopy on hexagonally symmetric films and valence band offsets of 0.63 ± 0.04 eV at the La2O3/GaN interface were measured. A conduction band offset of approximately 1.5 eV could be inferred from the measured valence band offset.

Details

ISSN :
10773118 and 00036951
Volume :
102
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........f8a27837e4959bee94c9085dbd18533d