LPE growth of GaxIn1-xAs layers on InP under PH3 partial pressure and results on Mg-doping

Two topics in the liquid-phase epitaxy of lattice-matched Ga 0.47 In 0.53 As layers on InP were studied. First, the addition of PH 3 to the H 2 ambient to prevent thermal decomposition of the substrates can be optimized to obviate the incorporation of P into the ternary layers. Secondly, Mg was used as an acceptor in both InP and GaInAs which was found to exhibit a smaller diffusion coefficient and activation energy, as well, as compared to Zn.