97 dB Dynamic Range CMOS Image Sensor Based on Diode Connected Load

This paper introduces the design and implementation of a wide dynamic range CMOS image sensor (CIS) with high sensitivity. The sensor is designed and implemented in a 130 nm CMOS technology. The pixel occupies an area of 3 μm × 3 μm and consists of six NMOS transistors with one capacitor. The readout circuit features an extremely low output noise of 19 μV rms with a 4 MHz bandwidth. Power dissipation of 11.2 μW was achieved at low voltage operation of 1.6 V. The sensor has a combination of low noise and a 97 dB wide dynamic range due to the diode connected load configuration.