Theoretical optimization of the photolithography through array of 1.2 μm silica microspheres

Interest in heteroepitaxy of III-V compounds on Si has been growing rapidly in recent years due to the potential of the optoelectronic components integration on silicon. However, most of the semiconductor compounds conventional in optoelectronics cannot be easily integrated on Si substrates due to the formation of the lattice defects. In this paper, we consider the fabrication of the mask consisting of the ordered nanoscale holes with the use of microsphere photolithography for selective epitaxial growth – promising approach for nanostructures fabrication on mismatched substrates. We have carried out the calculation of electromagnetic wave absorption in the photoresist layer through 1.2 μm microspherical silica lenses. The theoretical optimization of the photoresist thickness parameter allowed to obtain a value at which the minimum holes diameter in the photoresist is achieved. These data are necessary for carrying out the process of lithography through microspherical lenses to create a patterned growth mask.