Thermoelectric properties of ternary half-heuslar LuPdBi

We report the experimental study of low temperature thermoelectric properties of ternary half-Heuslar LuPdBi, synthesized by conventional arc melting. Resistivity measurements reveal the semi metallic nature of the conduction behavior, where holes are the major charge carriers as confirmed from positive value Seebeck coefficient in the entire temperature range 18–350 K. Thermal conductivity behavior indicates the dominance of phonon contribution and bipolaronic effects at low temperature regime with negligible electronic contribution. A considerably high power factor (∼ 100 μW/mK2) is obtained at room temperature.