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Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
- Source :
- ACS Applied Electronic Materials. 2:891-897
- Publication Year :
- 2020
- Publisher :
- American Chemical Society (ACS), 2020.
-
Abstract
- The impact of atomic layer bombardment (ALB) was investigated on the aluminum nitride (AlN) passivation layer between the HfO2 gate dielectric and the n-type epitaxial germanium (Ge). The ALB techn...
- Subjects :
- Materials science
Passivation
business.industry
Gate dielectric
chemistry.chemical_element
Germanium
Nitride
Epitaxy
Electronic, Optical and Magnetic Materials
Reliability (semiconductor)
chemistry
Materials Chemistry
Electrochemistry
Optoelectronics
business
Layer (electronics)
High-κ dielectric
Subjects
Details
- ISSN :
- 26376113
- Volume :
- 2
- Database :
- OpenAIRE
- Journal :
- ACS Applied Electronic Materials
- Accession number :
- edsair.doi...........f72b61c48e867a42dc649fdc499999a7
- Full Text :
- https://doi.org/10.1021/acsaelm.9b00819