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Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys
- Source :
- Applied Physics Letters. 83:3728-3730
- Publication Year :
- 2003
- Publisher :
- AIP Publishing, 2003.
-
Abstract
- We have studied the optical properties of pseudo-alloy monolayer InAs/GaAsN superlattices with highly planar interfaces. In spite of the two-dimensional growth mode, we found that the photoluminescence (PL) reveals strong exciton localization through the whole PL band, dominating the spectrum up to high excitation densities and observation temperatures. Pump-and-probe PL experiments provide the following time constants: (a) the exciton relaxation time to the ground states of the localization regions is found to be ∼40–70 ps, depending on the photon energy, and (b) the time for depopulation of these localized states is between 2 and 4 ns.
- Subjects :
- Condensed Matter::Materials Science
Materials science
Photoluminescence
Physics and Astronomy (miscellaneous)
Condensed matter physics
Exciton
Superlattice
Monolayer
Wide-bandgap semiconductor
Quasiparticle
Photon energy
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Excitation
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 83
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........f6df06170f3122d1279f5ca8812b9bdc