A comparative study of carrier lifetimes in ESWIR and MWIR materials: HgCdTe, InGaAs, InAsSb, and GeSn (Conference Presentation)

MLA

Enrico Bellotti, et al. “A Comparative Study of Carrier Lifetimes in ESWIR and MWIR Materials: HgCdTe, InGaAs, InAsSb, and GeSn (Conference Presentation).” Infrared Technology and Applications XLIII, June 2017. EBSCOhost, https://doi.org/10.1117/12.2265894.

APA

Enrico Bellotti, Hanqing Wen, Stefano Dominici, & Andreu Glasmann. (2017). A comparative study of carrier lifetimes in ESWIR and MWIR materials: HgCdTe, InGaAs, InAsSb, and GeSn (Conference Presentation). Infrared Technology and Applications XLIII. https://doi.org/10.1117/12.2265894

Chicago

Enrico Bellotti, Hanqing Wen, Stefano Dominici, and Andreu Glasmann. 2017. “A Comparative Study of Carrier Lifetimes in ESWIR and MWIR Materials: HgCdTe, InGaAs, InAsSb, and GeSn (Conference Presentation).” Infrared Technology and Applications XLIII, June. doi:10.1117/12.2265894.