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Bottom Dielectric Isolation to Suppress Sub-Fin Parasitic Channel of Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices
- Source :
- 2022 China Semiconductor Technology International Conference (CSTIC).
- Publication Year :
- 2022
- Publisher :
- IEEE, 2022.
Details
- Database :
- OpenAIRE
- Journal :
- 2022 China Semiconductor Technology International Conference (CSTIC)
- Accession number :
- edsair.doi...........f60632d7dabdac1fdd7f1a0dffe6c938
- Full Text :
- https://doi.org/10.1109/cstic55103.2022.9856910