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Recent Advances in Compute-in-Memory Support for SRAM Using Monolithic 3-D Integration

Authors :
Zhixiao Zhang
Meng-Fan Chang
Srivatsa Srinivasa
Akshay Krishna Ramanathan
Xin Si
Source :
IEEE Micro. 39:28-37
Publication Year :
2019
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2019.

Abstract

Computing-in-memory (CiM) is a popular design alternative to overcome the von Neumann bottleneck and improve the performance of artificial intelligence computing applications. Monolithic three-dimensional (M3D) technology is a promising solution to extend Moore's law through the development of CiM for data-intensive applications. In this article, we first discuss the motivation and challenges associated with two-dimensional CiM designs, and then examine the possibilities presented by emerging M3D technologies. Finally, we review recent advances and trends in the implementation of CiM using M3D technology.

Details

ISSN :
19374143 and 02721732
Volume :
39
Database :
OpenAIRE
Journal :
IEEE Micro
Accession number :
edsair.doi...........f589f71682ed2e4b30f5f8e8a804762a