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Corrigendum to 'TCAD simulations of FDSOI devices down to deep cryogenic temperature' [Solid-State Electron. 194 (2022) 108319]
- Source :
- Solid-State Electronics. 199:108541
- Publication Year :
- 2023
- Publisher :
- Elsevier BV, 2023.
Details
- ISSN :
- 00381101
- Volume :
- 199
- Database :
- OpenAIRE
- Journal :
- Solid-State Electronics
- Accession number :
- edsair.doi...........f52552e25f9764d8e0f073cc66226212