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Corrigendum to 'TCAD simulations of FDSOI devices down to deep cryogenic temperature' [Solid-State Electron. 194 (2022) 108319]

Authors :
E. Catapano
M. Cassé
F. Gaillard
S. de Franceschi
T. Meunier
M. Vinet
G. Ghibaudo
Source :
Solid-State Electronics. 199:108541
Publication Year :
2023
Publisher :
Elsevier BV, 2023.

Details

ISSN :
00381101
Volume :
199
Database :
OpenAIRE
Journal :
Solid-State Electronics
Accession number :
edsair.doi...........f52552e25f9764d8e0f073cc66226212