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Resistance switching of CuTCNQ nanowires developed for high-density memory devices

Authors :
J.-C. Valmalette
Ludovic Goux
A. Demolliens
J. Razafindramora
Reinhold Muller
Dirk J. Wouters
Ch. Turquat
Ch. Muller
Alexandre Merlen
Source :
2007 Non-Volatile Memory Technology Symposium.
Publication Year :
2007
Publisher :
IEEE, 2007.

Abstract

Copper-7,7',8,8'-tetracyanoquinodimethane (CuTCNQ) is an interesting material for memory applications since it reversibly switches from high to low resistance states under external voltage. In this paper, CuTCNQ material was prepared from the gas/solid reaction between metallic copper and hot gaseous TCNQ at low pressure to form CuTCNQ nanowires. Nanowires were first grown on Au stripes and aluminum top electrode deposition enabled formation of crossbar memory structures. Electrical testing including standard current-voltage and data retention measurements were performed on the Au/CuTCNQ/AI stacks. Besides, in order to apprehend the resistive switching mechanisms, Raman spectroscopy was carried out on packaged structures enabling measurements under electrical field. Finally, in the perspective of high-density memory devices, CuTCNQ nanowires were grown in via arrays and characterized by electron transmission microscopy.

Details

Database :
OpenAIRE
Journal :
2007 Non-Volatile Memory Technology Symposium
Accession number :
edsair.doi...........f4d3916ee4d410af61096e6300e39320
Full Text :
https://doi.org/10.1109/nvmt.2007.4389943