Nano-electronics of high κ dielectrics on InGaAs for key technologies beyond Si CMOS

The surface Fermi level unpinning in InGaAs has been realized with high κ dielectric growth using molecular beam eitaxy (MBE) and atomic layer deposition (ALD). Furthermore, world-record device performances in self-aligned inversion-channel InGaAs MOSFET and a capacitance equivalent thickness (CET) of ≤ 1 nm in Ga 2 O 3 (Gd 2 O 3 ) and ALD-HfO 2 on InGaAs have been achieved.