THE EPITAXIAL GROWTH OF BETA SILICON CARBIDE

Beta silicon carbide has been grown epitaxially on silicon, sapphire and silicon carbide substrates by chemical conversion, cathodic sputtering and a combination of both. The structural properties of the silicon carbide are described as a function of formation conditions. The applicability of the conversion technique to the epitaxial growth of β-silicon carbide on insulating substrates such as sapphire is discussed. Results show that thick epitaxial films of β-silicon carbide can be grown by using chemical conversion followed by cathodic sputtering.