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p–i–n diodes for monolithic millimetre wave BiCMOS applications
- Source :
- Semiconductor Science and Technology. 22:S208-S211
- Publication Year :
- 2006
- Publisher :
- IOP Publishing, 2006.
-
Abstract
- An integrated p-i-n diode for use in SiGe BiCMOS technology applications has been developed. The device may be used into the MMW frequency range
- Subjects :
- Materials science
business.industry
Integrated circuit
BiCMOS
Condensed Matter Physics
Bicmos technology
Electronic, Optical and Magnetic Materials
law.invention
law
Extremely high frequency
Materials Chemistry
Optoelectronics
Insertion loss
Bicmos integrated circuits
Electrical and Electronic Engineering
business
Microwave
Diode
Subjects
Details
- ISSN :
- 13616641 and 02681242
- Volume :
- 22
- Database :
- OpenAIRE
- Journal :
- Semiconductor Science and Technology
- Accession number :
- edsair.doi...........f3ac9b9a74f8ba41b736cb2ef97971ac
- Full Text :
- https://doi.org/10.1088/0268-1242/22/1/s49