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Field-effect transistor studies of precursor-pentacene thin films
- Source :
- Synthetic Metals. 85:1403-1404
- Publication Year :
- 1997
- Publisher :
- Elsevier BV, 1997.
-
Abstract
- Precursor-route pentacene thin film transistor characteristics are presented. The device temperature dependance is reported and the results discussed in terms of a distribution of mobilities. Voltage modulation spectroscopy is also reported and features discussed.
- Subjects :
- Materials science
Absorption spectroscopy
Charge carrier mobility
business.industry
Mechanical Engineering
ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION
Metals and Alloys
Analytical chemistry
Hardware_PERFORMANCEANDRELIABILITY
Condensed Matter Physics
Voltage modulation
Electronic, Optical and Magnetic Materials
Pentacene
chemistry.chemical_compound
chemistry
Mechanics of Materials
Thin-film transistor
Hardware_INTEGRATEDCIRCUITS
Materials Chemistry
Optoelectronics
Field-effect transistor
Thin film
Spectroscopy
business
Subjects
Details
- ISSN :
- 03796779
- Volume :
- 85
- Database :
- OpenAIRE
- Journal :
- Synthetic Metals
- Accession number :
- edsair.doi...........f3581890efc8ba683112bf92a3fcaa95