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Reproducible unipolar resistive switching behaviors in the metal-deficient CoOx thin film
- Source :
- Thin Solid Films. 518:6437-6440
- Publication Year :
- 2010
- Publisher :
- Elsevier BV, 2010.
-
Abstract
- Pt/CoOx/Pt tri-layers exhibited reproducible and stable unipolar switching under a dc sweeping voltage. In order to investigate the role of oxygen reduction in the metal-deficient CoOx layer, resistive switching of the post-annealed CoOx thin film was compared with those of the as-deposited CoOx thin film. X-ray photoemission spectroscopy showed larger reproducible resistance switching and decreasing of current level in the post-annealed CoOx thin film. This may be explained by a reduction in oxygen stoichiometry without phase transformation of the CoOx. In addition, stable switching in post-annealed CoOx layer is considered to originate from the decrease of the Co vacancies in local Co3O4 region partially distributed in the whole CoOx layer, not in the dominant CoO.
- Subjects :
- Chemistry
Photoemission spectroscopy
Metals and Alloys
Analytical chemistry
Surfaces and Interfaces
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Resistive random-access memory
Non-volatile memory
Phase (matter)
Materials Chemistry
Thin film
Layer (electronics)
Cobalt oxide
Stoichiometry
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 518
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........f3496a403a28d009a23b41105d19df88
- Full Text :
- https://doi.org/10.1016/j.tsf.2010.03.050