Monolithic CCD time-delay-and-integrate arrays in HgCdTe

Charge-coupled device (CCD) infrared detector arrays in 5 /spl mu/m cutoff HgCdTe have been demonstrated for low background applications. These fully monolithic CCD arrays incorporate time-delay-and-integrate (TDI) detection, serial readout multiplexing, charge-to-voltage conversion and buffer amplification in the HgCdTe detector chip. Performance data indicates the monolithic CCD to be a viable alternative to present hybrid focal plane array technology. >