InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3–4 µm

Diode lasers based on InAsSb/InAsSbP with separate electrical and optical confinement, emitting in the wavelength interval 3–4 µm, are investigated. The lasers attain a higher operating temperature when electrical confinement is created by means of type-II heterojunctions. Interface Auger recombination is suppressed in lasers of this type, and the experimental current density is close to the theoretically calculated value for the case of predominant volume Auger recombination at a temperature of 180–220 K.