Properties of Low-Dimentional Polysilicon in SOI Structures for Low Temperature Sensors

Authors :: Igor Kogut
Anatoly Druzhinin
Yu. Khoverko
Roman Koretskii
Source :: Advanced Materials Research. 854:49-55
Publication Year :: 2013
Publisher :: Trans Tech Publications, Ltd., 2013.
Abstract: The low temperature studies of SOI-structures have been carried out in a temperature range of 4.2÷300K at magnetic fields up to 14T. The samples with initial boron concentration of about 2.41018сm-3 have been investigated. The results of the studies of SOI-structure conductance at low temperatures in the range of hopping conductance and a possibility to use this material in sensors are analyzed.

Subjects :: Range (particle radiation)
Materials science
Magnetoresistance
business.industry
Polysilicon depletion effect
General Engineering
Conductance
Silicon on insulator
Atmospheric temperature range
Magnetic field
Boron concentration
Electronic engineering
Optoelectronics
business

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