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Properties of Low-Dimentional Polysilicon in SOI Structures for Low Temperature Sensors
- Source :
- Advanced Materials Research. 854:49-55
- Publication Year :
- 2013
- Publisher :
- Trans Tech Publications, Ltd., 2013.
-
Abstract
- The low temperature studies of SOI-structures have been carried out in a temperature range of 4.2÷300K at magnetic fields up to 14T. The samples with initial boron concentration of about 2.41018сm-3 have been investigated. The results of the studies of SOI-structure conductance at low temperatures in the range of hopping conductance and a possibility to use this material in sensors are analyzed.
Details
- ISSN :
- 16628985
- Volume :
- 854
- Database :
- OpenAIRE
- Journal :
- Advanced Materials Research
- Accession number :
- edsair.doi...........f2992a3a966f61d8618298d6e3534fde