Spin relaxation through lateral spin transport in heavily doped n -type silicon

Authors :: Yoshiaki Saito
Mizue Ishikawa
Y. Fujita
H. Sugiyama
Kohei Hamaya
Toshitaka Oka
Source :: Physical Review B. 95
Publication Year :: 2017
Publisher :: American Physical Society (APS), 2017.

Subjects :: 010302 applied physics
Materials science
Condensed matter physics
N type silicon
0103 physical sciences
Doping
02 engineering and technology
021001 nanoscience & nanotechnology
0210 nano-technology
01 natural sciences
Spin relaxation
Spin-½

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