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The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency
- Source :
- Electronic Materials Letters. 10:457-460
- Publication Year :
- 2014
- Publisher :
- Springer Science and Business Media LLC, 2014.
-
Abstract
- This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) fabricated by a novel chemical solution. With the anti-reflective feature at long wavelength and down-conversion at UV regime, the CdS quantum dot effectively enhance the overall power conversion efficiency more than that of a traditional GaAs-based device. Experimental results indicate that CdS quantum dot can enhance the short-circuit current by 0.33 mA/cm2, which is observed for the triple-junction solar cells with CdS QDs of about 3.5 nm in diameter. Moreover, the solar cell conversion efficiency is improved from 28.3% to 29.0% under one-sun AM 1.5 global illumination I–V measurement.
- Subjects :
- Materials science
business.industry
Triple junction
Energy conversion efficiency
Quantum dot solar cell
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Electronic, Optical and Magnetic Materials
law.invention
Condensed Matter::Materials Science
Solar cell efficiency
law
Quantum dot
Solar cell
Astrophysics::Solar and Stellar Astrophysics
Optoelectronics
Chemical solution
business
Ingap gaas
Subjects
Details
- ISSN :
- 20936788 and 17388090
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- Electronic Materials Letters
- Accession number :
- edsair.doi...........f20a7056f67021147c3de6561f64c2d6