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Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode
- Source :
- Applied Physics Letters. 105:251103
- Publication Year :
- 2014
- Publisher :
- AIP Publishing, 2014.
-
Abstract
- In this experiment, a flip-chip light-emitting diode with photonic crystal was fabricated at the interface of p-GaN and Ag reflector via nanospheres lithography technique. In this structure, photonic crystal could couple with the guide-light efficiently by reason of the little distance between photonic crystal and active region. The light output power of light emitting diode with embedded photonic crystal was 1.42 times larger than that of planar flip-chip light-emitting diode. Moreover, the embedded photonic crystal structure makes the far-field divergence angle decreased by 18° without spectra shift. The three-dimensional finite difference time domain simulation results show that photonic crystal could improve the light extraction, and enhance the light absorption caused by Ag reflector simultaneously, because of the roughed surface. The depth of photonic crystal is the key parameter affecting the light extraction and absorption. Light extraction efficiency increases with the depth photonic crystal structure rapidly, and reaches the maximum at the depth 80 nm, beyond which light extraction decrease drastically.
- Subjects :
- Reflector (photography)
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Light extraction in LEDs
Photonic integrated circuit
Physics::Optics
Yablonovite
law.invention
Optics
law
Optoelectronics
business
Absorption (electromagnetic radiation)
Light-emitting diode
Diode
Photonic crystal
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 105
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........f1b5b7248f67ce391f57bd53a3c13236