P-28: ZnO TFTs Fabricated at Room Temperature by Solution Process

The ZnO nanorods TFT using solution process was investigated. The nanorods were well-chemically synthesized by ultrasonic methods and their length and diameter were adjusted to about 50∼150nm and 5∼15nm, respectively. The nanorods were coated onto SiO2 substrate by spin casting. The nanorods films were treated at room temperature condition. The device exhibits an on-to-off current ratio of 8.6 × 105 and a field mobility 2.1 cm2V−1s−1.