Back to Search
Start Over
Piezoresistive Electronic-Skin Sensors Produced With Self-Channeling Laser Microstructured Silicon Molds
- Source :
- IEEE Transactions on Electron Devices. 68:786-792
- Publication Year :
- 2021
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2021.
-
Abstract
- Highly sensitive and cost-effective flexible piezoresistive sensors are pursued as essential components of electronic skin (e-skin) for a variety of applications such as soft robotics and body prosthesis. A common strategy for achieving high sensitivity of these sensors is to fabricate their electrode material with complex 3-D microstructures, but manufacturing cost-effective micro-structured sensors with high reliability and reproducibility is a challenge. Herein, a robust approach for producing high-reproductive microstructured polydimethylsiloxane (PDMS) films composing the sensors is proposed, based on silicon molds with a honeycomb-like architecture fabricated rapidly and cost-effectively at a standoff distance by femtosecond laser pulses in the self-channeling regime. Single-walled carbon nanotubes (SWNTs) are embedded in the micro-structured PDMS films composing sandwich-structural flexible piezoresistive sensors. The sensing devices exhibit good performance with high sensitivity, fast response time, and excellent stability and are used with success for the detection of hand motion pressure and blood pressure at the wrist, thus showing a great potential as components of e-skin for detection of various human motions.
- Subjects :
- 010302 applied physics
Fabrication
Materials science
Silicon
Polydimethylsiloxane
business.industry
Soft robotics
Electronic skin
chemistry.chemical_element
Laser
01 natural sciences
Piezoresistive effect
Electronic, Optical and Magnetic Materials
law.invention
chemistry.chemical_compound
chemistry
law
0103 physical sciences
Femtosecond
Optoelectronics
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 68
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........f17213be5feee77b31428d42b04cd1bc