Material characteristics of metalorganic chemical vapor deposition Hg1−xCdxTe/GaAs/Si

Layers of epitaxial Hg1−xCdxTe have been grown by metalorganic chemical vapor deposition (MOCVD) on GaAs/Si substrates. Data is presented on surface morphology, compositional uniformity, double crystal x‐ray diffraction, chemical defect etching, laser beam induced current imaging, and Hall effect. Compositional uniformity is 6% for 3 in. diam areas and 0.6% for the interior 2 in. diam area. The material characteristics of these layers are in the range suitable for fabrication of infrared detectors. The material characteristics are compared with those of similar layers grown on bulk GaAs substrates.