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Quantum light source devices of In(Ga)As semiconductorself-assembled quantum dots
- Source :
- Journal of Semiconductors. 40:071902
- Publication Year :
- 2019
- Publisher :
- IOP Publishing, 2019.
-
Abstract
- A brief introduction of semiconductor self-assembled quantum dots (QDs) applied in single-photon sources is given. Single QDs in confined quantum optical microcavity systems are reviewed along with their optical properties and coupling characteristics. Subsequently, the recent progresses in In(Ga)As QDs systems are summarized including the preparation of quantum light sources, multiple methods for embedding single QDs into different microcavities and the scalability of single-photon emitting wavelength. Particularly, several In(Ga)As QD single-photon devices are surveyed including In(Ga)As QDs coupling with nanowires, InAs QDs coupling with distributed Bragg reflection microcavity and the In(Ga)As QDs coupling with micropillar microcavities. Furthermore, applications in the field of single QDs technology are illustrated, such as the entangled photon emission by spontaneous parametric down conversion, the single-photon quantum storage, the chip preparation of single-photon sources as well as the single-photon resonance-fluorescence measurements.
- Subjects :
- Photon
Materials science
Nanowire
Physics::Optics
02 engineering and technology
Quantum entanglement
01 natural sciences
law.invention
Condensed Matter::Materials Science
Spontaneous parametric down-conversion
law
0103 physical sciences
Materials Chemistry
Electrical and Electronic Engineering
010306 general physics
Quantum optics
Condensed Matter::Other
business.industry
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
Condensed Matter Physics
Optical microcavity
Electronic, Optical and Magnetic Materials
Semiconductor
Quantum dot
Optoelectronics
0210 nano-technology
business
Subjects
Details
- ISSN :
- 20586140 and 16744926
- Volume :
- 40
- Database :
- OpenAIRE
- Journal :
- Journal of Semiconductors
- Accession number :
- edsair.doi...........f15a7cfc8b7be74a8afbaf9c8c23e1a6
- Full Text :
- https://doi.org/10.1088/1674-4926/40/7/071902