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High performance normally-off Al2O3/GaN MOSFETs with record high threshold voltage by interface charge engineering
- Source :
- 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
- Publication Year :
- 2016
- Publisher :
- IEEE, 2016.
-
Abstract
- An efficient approach to engineering the Al2O3/GaN positive interface fixed charges (Qit+) by post-dielectric annealing in nitrogen is demonstrated. The remarkable reduction of interface fixed charges from 1.44×1013 to 3×1012 cm−2 was observed, which leads to a record high threshold voltage (VTH) of +7.6 V obtained in the Al2O3/GaN MOSFETs. The positive interface charges were proposed originating from the N-vacancy and O-substitution at the Al2O3/GaN interface and validated by Ab initio study. The device with dimensions of LG/LGS/LGD/WG = 2/1.5/5/50 µm delivers a high drain current density of 355 mA/mm. A high breakdown voltage of 1054 V @ 1 µA/mm was measured in the device with LGD of 20 µm. The results reveal that the method reported in this work is promising in pushing the VTH more positive and simultaneously achieving good device performance of normally-off GaN power devices.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Annealing (metallurgy)
Electronic packaging
Gallium nitride
01 natural sciences
Threshold voltage
chemistry.chemical_compound
chemistry
Logic gate
0103 physical sciences
MOSFET
Optoelectronics
Breakdown voltage
Power semiconductor device
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
- Accession number :
- edsair.doi...........f14e2b340851239e341c40aea0716265