Effect of temperature dependent relaxation time of charge carriers on the thermoelectric properties of LiScX (X=C, Si, Ge) half-Heusler alloys

We compute the temperature dependent relaxation time (τ) of charge carriers in LiScX (X = C, Si, Ge) half-Heusler (hH) alloys using the deformation potential theory. This temperature dependent τ of charge carriers is used to investigate its effect on the thermoelectric properties of these hH alloys. It is shown that there is a significant effect of temperature dependent τ of charge carriers on the thermoelectric properties of these hH alloys.