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Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions

Authors :
Dong Pan
Chennupati Jagadish
Jun He
Mingtang Deng
Hark Hoe Tan
Yijin Zhou
Bijun Zhao
Xiaoming Yuan
Kun Peng
Xutao Zhang
Source :
Applied Physics Reviews. 8:021302
Publication Year :
2021
Publisher :
AIP Publishing, 2021.

Abstract

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays in a fully controllable way and is thus of great interest in both basic science and device applications. Here, an overview of this promising technique is presented, focusing on the growth fundamentals, formation of III–V nanowire arrays, monolithic integration of III–V nanowire arrays on silicon, the growth of nanowire heterostructures, and networks of various shapes. The applications of these III–V nanostructure arrays in photonics, electronics, optoelectronics, and quantum science are also reviewed. Finally, the current challenges and opportunities provided by SAE are discussed.

Details

ISSN :
19319401
Volume :
8
Database :
OpenAIRE
Journal :
Applied Physics Reviews
Accession number :
edsair.doi...........f1256f0b63c9e4d02808de6daebd416c
Full Text :
https://doi.org/10.1063/5.0044706