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Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions
- Source :
- Applied Physics Reviews. 8:021302
- Publication Year :
- 2021
- Publisher :
- AIP Publishing, 2021.
-
Abstract
- Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays in a fully controllable way and is thus of great interest in both basic science and device applications. Here, an overview of this promising technique is presented, focusing on the growth fundamentals, formation of III–V nanowire arrays, monolithic integration of III–V nanowire arrays on silicon, the growth of nanowire heterostructures, and networks of various shapes. The applications of these III–V nanostructure arrays in photonics, electronics, optoelectronics, and quantum science are also reviewed. Finally, the current challenges and opportunities provided by SAE are discussed.
- Subjects :
- 010302 applied physics
Nanostructure
Materials science
Silicon
business.industry
Nanowire
General Physics and Astronomy
chemistry.chemical_element
Nanotechnology
Heterojunction
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Selective area epitaxy
chemistry
0103 physical sciences
Electronics
Photonics
0210 nano-technology
business
Quantum information science
Subjects
Details
- ISSN :
- 19319401
- Volume :
- 8
- Database :
- OpenAIRE
- Journal :
- Applied Physics Reviews
- Accession number :
- edsair.doi...........f1256f0b63c9e4d02808de6daebd416c
- Full Text :
- https://doi.org/10.1063/5.0044706