Investigations of well defined dislocations in silicon

The velocity v of dislocation half-loops introduced into swirl-free floating-zone grown undoped silicon has been measured at 420°C in the resolved shear stress range 30 In the second part the papers review EPR spectroscopy of plastically deformed silicon and collects new results on the activity of dislocations in this material as trapping / recombination centers (decay of photo-EPR, photoluminescence, EBIC microscopy and photoplastic effect).