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Proton irradiation effects on AlN/GaN high electron mobility transistors

Authors :
Chien-Fong Lo
David J. Smith
Chih-Yang Chang
Byung Hwan Chu
Lin Zhou
David A. Cullen
Peter Chow
Amir M. Dabiran
Jihyun Kim
Hong Yeol Kim
Soohwan Jang
Fan Ren
Stephen J. Pearton
Bentao Cui
Source :
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:L47-L51
Publication Year :
2010
Publisher :
American Vacuum Society, 2010.

Abstract

AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2×1011 to 2×1015 protons/cm2. Changes from 10% to 35% of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2×1011 protons/cm2 irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation.

Details

ISSN :
21662754 and 21662746
Volume :
28
Database :
OpenAIRE
Journal :
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Accession number :
edsair.doi...........f0ea24b93bdcc70a03f1ca4b068a4c36
Full Text :
https://doi.org/10.1116/1.3482335