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Proton irradiation effects on AlN/GaN high electron mobility transistors
- Source :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:L47-L51
- Publication Year :
- 2010
- Publisher :
- American Vacuum Society, 2010.
-
Abstract
- AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2×1011 to 2×1015 protons/cm2. Changes from 10% to 35% of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2×1011 protons/cm2 irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation.
- Subjects :
- Materials science
Proton
Physics::Instrumentation and Detectors
business.industry
Carrier scattering
Process Chemistry and Technology
Physics::Medical Physics
Transistor
Induced high electron mobility transistor
Biasing
High-electron-mobility transistor
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
law
Materials Chemistry
Sapphire
Optoelectronics
Irradiation
Electrical and Electronic Engineering
Nuclear Experiment
business
Instrumentation
Subjects
Details
- ISSN :
- 21662754 and 21662746
- Volume :
- 28
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
- Accession number :
- edsair.doi...........f0ea24b93bdcc70a03f1ca4b068a4c36
- Full Text :
- https://doi.org/10.1116/1.3482335