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The effects of Ag+ and Al3+ substitution in (Cu1-xAgx)(In1-x Alx)S2 chalcopyrite nanoparticles synthesized by hydrothermal method: Study of microstructures and optical properties

Authors :
Ali Beitollahi
S. Mohammad Mirkazemi
Said Rahimi
Source :
Optical and Quantum Electronics. 53
Publication Year :
2021
Publisher :
Springer Science and Business Media LLC, 2021.

Abstract

In this research, Ag+ and Al3+ doped CuInS2 (CIS) nanoparticles were synthesized by a low-cost and non-vacuum hydrothermal method. The CuInS2 nanoparticles were synthesized by the stoichiometric ratio of (1Cu: 1In: 2S) using the hydrothermal method at 180℃ and for 16, 18 and 20 h. Afterward, Ag+ and Al3+ ions were doped with non-stoichiometric composition of (Cu1-xAgx)InS2, Cu(In1-xAlx)S2 (x = 0.1, 0.2, and 0.3), and (Cu1-xAgx)(In1-xAlx)S2 (x = 0.1). The phase evolution, microstructural, and optical properties have also been studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), UV–Vis spectroscopy techniques. The XRD results showed that the sample was prepared by the hydrothermal route at 180° C for 20 h was single-phase and no impurity phase was detected. However, some minor impurity phases (CuS and Cu9S5) were detected in the samples were synthesized at 180° C in 16 h and 18 h. The results show that the crystallite size of the synthesized nanoparticles of CIS at 16, 18, and 20 h are 26, 29, and 32 nm, respectively. The lattice parameters for the sample synthesized in 20 h were calculated to be 5.52 A (a) and 11.11 A (c). The FE-SEM micrographs showed that the pure CIS nanoparticles have flower-shaped morphology and the type and concentration of used dopants affect the morphology of the nanoparticles. The bandgap of single-phase CIS synthesized nanoparticles was 1.5 eV. However, the bandgap of (Cu0.9Ag0.1)InS2 and Cu(In0.9Al0.1)S2 was 1.4 eV and 1.70, respectively. The bandgap of (Cu0.9Ag0.1) (In0.9Al0.1)S2 was 2 eV.

Details

ISSN :
1572817X and 03068919
Volume :
53
Database :
OpenAIRE
Journal :
Optical and Quantum Electronics
Accession number :
edsair.doi...........f0daeff3f859a064518d5fd3490cdb13
Full Text :
https://doi.org/10.1007/s11082-021-02753-x