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Assessing reliability issues in cryogenically-operated SiGe HBTs
- Source :
- Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..
- Publication Year :
- 2005
- Publisher :
- IEEE, 2005.
-
Abstract
- We assess SiGe HBTs for emerging mixed-signal cryogenic circuits designed to operate on the Moon without ambient heating or cooling (from +120C to as low as -230C), focusing of potential reliability issues. Comprehensive mixed-mode reliability stress data for these SiGe HBTs were measured from 300 K to 85 K. We extract the thermal resistance over temperature to evaluate the impact of the self-heating at low temperatures, explore the low-frequency noise performance at room temperature and cryogenic temperatures as a function of stress condition, and examine the impact of cooling on breakdown voltage and operating point instabilities for mixed-signal circuits.
Details
- Database :
- OpenAIRE
- Journal :
- Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005.
- Accession number :
- edsair.doi...........f0ca6993265b460ab1031a4adaa6f352