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3-D Mapping of Sensitivity of Graphene Hall Devices to Local Magnetic and Electrical Fields
- Source :
- IEEE Transactions on Magnetics. 49:3445-3448
- Publication Year :
- 2013
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2013.
-
Abstract
- We report the response of sub-micron epitaxial graphene Hall devices to localized and inhomogeneous magnetic field produced by an MFM tip. We analyze the magneto-transport properties of epitaxial graphene and report the independent contribution of magnetic and electric fields in the measured transverse voltage maps with respect to the lateral and vertical position of the tip. A finite element model has also been developed to support the experimental results.
Details
- ISSN :
- 19410069 and 00189464
- Volume :
- 49
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Magnetics
- Accession number :
- edsair.doi...........f0c6a5cad38288678724af1f93e73da4