Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon

Authors :: Eddy Simoen
A Kraitchinskii
V. B. Neimash
Cor Claeys
L.I. Shpinar
M. Kras'ko
Source :: Solid State Phenomena. :425-430
Publication Year :: 2001
Publisher :: Trans Tech Publications, Ltd., 2001.

Subjects :: Deep-level transient spectroscopy
Materials science
Silicon
business.industry
N type silicon
Doping
chemistry.chemical_element
Carrier lifetime
Radiation
Condensed Matter Physics
Tin doping
Atomic and Molecular Physics, and Optics
chemistry
Optoelectronics
General Materials Science
business
Tin

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