A TCAD-based Study of NDR Effect in NC-FinFET

In this paper, the cause of inverse drain induced barrier lowering effect in negative capacitance field effect transistors (NCFETs) is discussed, and a capacitance model is given. Based on inverse DIBL effect, negative differential resistance phenomenon could occur, and these two effects are hard to be removed. Since higher on-off ratio and lower NDR cannot be achieved at the same condition, their relationship with device structure is also studied.