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Materials characterization of n - ZnO / p - GaN : Mg / c - Al2O3 UV LEDs grown by pulsed laser deposition and metal–organic chemical vapor deposition
- Source :
- Superlattices and Microstructures. 42:322-326
- Publication Year :
- 2007
- Publisher :
- Elsevier BV, 2007.
-
Abstract
- n-ZnO/p-GaN:Mg hybrid heterojunctions grown on c-Al2O3 substrates showed 375 nm room temperature electroluminescence. It was suggested that the high materials and interface quality obtained using pulsed laser deposition for the n-ZnO growth and metal–organic chemical vapor deposition for the p-GaN:Mg were key factors enabling the injection of holes and the radiative near band edge recombination in the ZnO. In this paper we present the materials characterization of this structure using x-ray diffraction, scanning electron microscopy and atomic force microscopy.
- Subjects :
- Materials science
business.industry
Scanning electron microscope
Analytical chemistry
Heterojunction
Chemical vapor deposition
Electroluminescence
Condensed Matter Physics
Electron beam physical vapor deposition
Pulsed laser deposition
law.invention
law
Optoelectronics
General Materials Science
Electrical and Electronic Engineering
Thin film
business
Light-emitting diode
Subjects
Details
- ISSN :
- 07496036
- Volume :
- 42
- Database :
- OpenAIRE
- Journal :
- Superlattices and Microstructures
- Accession number :
- edsair.doi...........f0852ff8de13e5dda42987f3781d69ed